5SHX1960L0006 3BHB016120R0002 3BHE019719R0101 GVC736BE101 IGCT device

¥3,560.00

5SHX1960L0006 3BHB016120R0002 3BHE019719R0101 GVC736BE101

  • Symbol: IT(AV)M
  • Conditions: Half sine wave, TC = 85 °C, Double side cooled
  • Minimum: N/A
  • Typical: N/A
  • Maximum: 1700 A
  • Unit: Amperes (A)
Category: SKU: 5SHX1960L0006 3BHB016120R0002
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Description

5SHX1960L0006 3BHB016120R0002 3BHE019719R0101 GVC736BE101 IGCT device

 

On-state of IGCT: Maximum Rated Values:

  1. Max. Average On-State Current (IT(AV)M):
    • Symbol: IT(AV)M
    • Conditions: Half sine wave, TC = 85 °C, Double side cooled
    • Minimum: N/A
    • Typical: N/A
    • Maximum: 1700 A
    • Unit: Amperes (A)
  2. Max. RMS On-State Current (IT(RMS)):
    • Symbol: IT(RMS)
    • Conditions: N/A
    • Minimum: N/A
    • Typical: N/A
    • Maximum: 2670 A
    • Unit: Amperes (A)
  3. Max. Peak Non-Repetitive Surge On-State Current (ITSM):
    • Symbol: ITSM
    • Conditions: tp = 10 ms, Tj = 125 °C, sine wave, after surge: VD = VR = 0 V
    • Minimum: N/A
    • Typical: N/A
    • Maximum: 32 × 10^3 A
    • Unit: Amperes (A)
  4. Limiting Load Integral I²t (tp = 10 ms):
    • Symbol: I²t
    • Conditions: Tj = 125 °C, sine wave, after surge: VD = VR = 0 V
    • Minimum: N/A
    • Typical: N/A
    • Maximum: 5.12 × 10^6 A²s
    • Unit: Ampere-Squared Seconds (A²s)
  5. Max. Peak Non-Repetitive Surge On-State Current (ITSM):
    • Symbol: ITSM
    • Conditions: tp = 30 ms, Tj = 125 °C, sine wave, after surge: VD = VR = 0 V
    • Minimum: N/A
    • Typical: N/A
    • Maximum: 21 × 10^3 A
    • Unit: Amperes (A)
  6. Limiting Load Integral I²t (tp = 30 ms):
    • Symbol: I²t
    • Conditions: Tj = 125 °C, sine wave, after surge: VD = VR = 0 V
    • Minimum: N/A
    • Typical: N/A
    • Maximum: 6.62 × 10^6 A²s
    • Unit: Ampere-Squared Seconds (A²s)
  7. Stray Inductance between GCT and Antiparallel Diode (LD):
    • Symbol: LD
    • Conditions: Only relevant for applications with antiparallel diode to the IGCT
    • Minimum: N/A
    • Typical: N/A
    • Maximum: 300 nH
    • Unit: NanoHenries (nH)
  8. Critical Rate of Rise of On-State Current (diT/dtcr):
    • Symbol: diT/dtcr
    • Conditions: For higher diT/dt and current lower than 100 A, an external retrigger pulse is required.
    • Minimum: N/A
    • Typical: N/A
    • Maximum: 200 A/µs
    • Unit: Amperes per Microsecond (A/µs)

Characteristic Values:

  1. On-State Voltage (VT):
    • Symbol: VT
    • Conditions: IT = 4000 A, Tj = 125 °C
    • Minimum: N/A
    • Typical: 2.35 V
    • Maximum: 2.7 V
    • Unit: Volts (V)
  2. Threshold Voltage (V(T0)):
    • Symbol: V(T0)
    • Conditions: N/A
    • Minimum: N/A
    • Typical: 1.4 V
    • Maximum: N/A
    • Unit: Volts (V)
  3. Slope Resistance (rT):
    • Symbol: rT
    • Conditions: Tj = 125 °C, IT = 1000…4000 A
    • Minimum: N/A
    • Typical: N/A
    • Maximum: 0.325 mW
    • Unit: Milliwatts (mW)

Note:

  • IT(AV)M and IT(RMS) represent the average and RMS values of the half-sinusoidal on-state current under specific conditions.
  • These values are used for comparing different products for on-state performance and indicate maximum current capability at low frequency.
  • Consider thermal conditions as they may differ between products and suppliers, substantially influencing current ratings.