5SHY3545L0005 3BHB004692R0001 ABB control unit

The provided information expands on the versatility, efficiency, and cost-effectiveness of IGCTs and their applications. Here are key points from the additional details:

1. Versatility and Cost-Effectiveness:
   • Despite being a relatively recent addition to the market, IGCTs have gained popularity in various applications due to their versatility, efficiency, and cost-effectiveness.
   • 4 kA IGCTs have achieved device costs as low as $0.15 per kW switched, making them comparable to mass-produced 1200 V IGBTs.
   • With on-state voltages of only 2.7 V at 4 kA, they offer the lowest running costs in Energy Management Systems, achieving inverter efficiencies as high as 99.6%.
2. Variety of Devices:
   • IGCTs are available as symmetric, asymmetric, and reverse blocking devices, allowing their use in both AC and DC circuits.
   • They can be employed in self-commutated, line-commutated, or load-commutated applications.
3. Applications in Induction Heating:
   • IGCTs are being designed into parallel and series resonant inverters in induction heating furnaces due to their ability to operate as “zero tQ,” highly interdigitated, fast, high voltage thyristors.
   • The low losses of IGCTs enable operating frequencies of up to 600 Hz for 6.5 kV devices and 1 kHz for 4.5 kV devices in steady state, with the capability to operate at 25 kHz in burst mode.
4. VSI Topology and Commutation:
   • Fig. 2 illustrates the basic IGCT Voltage Source Inverter (VSI) topology.
   • Diode commutation is controlled by inductance (L), not by turn-on modulation as with IGBTs.
   • The clamp circuit in Fig. 2 eliminates turn-on energy in the semiconductor by storing it in L and recycles a part of this energy as semiconductor turn-off losses, enhancing system efficiency.
5. Fault Limitation Technique:
   • The inductance is highlighted as a pragmatic fault limitation technique in the event of catastrophic failure, providing an advantage over resistors and fuses.
   • The inductance “already being there” makes it a practical choice.
6. Reliability and Construction:
   • The press-pack construction of the IGCT, combined with inductance, makes it resistant to explosions, even when the device’s surge rating is exceeded.
   • Turn-off dv/dt is not gate-controlled but programmed at the device manufacturing stage by anode design and lifetime engineering, simplifying gate-unit design and allowing a high degree of standardization.

Overall, the information emphasizes the technical advantages and broad applicability of IGCTs in various high-power scenarios.

5SHY3545L0005 3BHB004692R0001 ABB control unit