ABB KUC755AE106 3BHB005243R0106 Drive Unit Variable Frequency Medium and High Voltage Control System

Description

IGBT is a kind of power semiconductor device KUC755AE106, which has both the advantages of high impedance of MOSFET and low conduction voltage drop of BJT. It is similar to a circuit switch that changes the voltage through switch control.

IGBTs can be divided into low-voltage, medium voltage and high-voltage products according to the voltage range, corresponding to different application scenarios.
(1) The low voltage is usually below 1200V, and KUC755AE106 is mainly used in the field of low consumption consumer electronics and solar inverters;
(2) Medium voltage is usually 1200V~2500V, mainly used in new energy vehicles, wind power generation and other fields;
(3) High voltage is usually above 2500V, which is mainly used in high voltage and high current high-speed railway, motor train, smart grid, industrial motor and other fields.
IGBT has developed to the seventh generation, but the current mainstream product in the market is the fourth generation product defined by KUC755AE106 Infineon, which is a product 10 years ago, indicating that the upgrading of the industry is very slow, and the barriers are also high. Its high barriers are not all in the technical level, and the accumulation of manufacturing processes is also very important.
The production process of IGBT is very complex, and it often takes a long time to master. The traditional power semiconductor process may take only one week, while IGBT can take up to three months.
However, the certification process of the most core downstream application field – vehicle specification chip is longer, and it usually takes two years to complete the certification. After entering the supply chain of vehicle enterprises, it usually has a 5-10 year supply cycle, making the entry threshold higher.
Although some domestic enterprises claim to have been able to benchmark the 6th and 7th generation products of Infineon, in fact, they are only in the design stage, and have not yet achieved mass production. The manufacturing process cannot meet the requirements, and will be available next year as soon as possible.
The following is the development history of Infineon’s 7th generation products:
IGBT mainly adopts mature manufacturing process, and the current production is mainly based on 8-inch wafers. IGBT products are highly dependent on the production line process. At present, international IGBT large factories mainly use 8-inch production lines. In order to further improve the product performance and reliability, IGBT manufacturers are actively arranging related processes that can be used for 12 inch wafers. As a leading IGBT enterprise, Infineon has launched IGBT devices produced with 12 inch wafers in 2018. At the same time, the 12 inch IGBT capacity of Starr semi conductor has also achieved mass production.
It is estimated that the market size of IGBT for new energy vehicles will increase from US $509 million to US $1.7 billion from 2020 to 2026, with a compound annual growth rate of 22.26%, making it the fastest growing downstream application of IGBT. In new energy vehicles, the value of power semiconductor devices is about five times more than that of traditional fuel vehicles, and IGBT accounts for about 44% of the cost of the electronic control system of new energy vehicles. It is one of the most core electronic devices in the electronic control system.
Therefore, with the rapid development of the new energy vehicle market and the application of intelligent driving technology, the demand and value of power semiconductor devices represented by IGBT will increase significantly. However, the automotive industry has high requirements for reliability and safety, so it does not need high-end products. At present, the mainstream is Infineon’s 4th and 5th generation products.
In addition, the IGBT module in the charging pile is the core device responsible for power conversion. For 20000 charging piles, IGBT will account for more than 3000 yuan. With the rapid growth of the number of charging piles, IGBT will continue to grow.
At present, overseas enterprises’ IGBT products have a wide range of voltage coverage and strong strength, occupying the main market. Overseas manufacturers such as Infineon, Mitsubishi Electric, Fuji Electric, ABB, etc. have a total share of 48% in China’s IGBT market, especially in the high-end IGBT market. Overseas manufacturers have a very clear market position, and Infineon is the leader among them, while local enterprises are mostly concentrated in the middle and low voltage markets.
However, due to the epidemic situation and other reasons, the overseas leading capacity is seriously in short supply, and the downstream new energy is a fast incremental market, which brings accelerated replacement opportunities to domestic companies, with a very high prosperity.

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