5SHX0660F0002 ABB order number 3BHE022333R0101

The provided information discusses the evolving trend in semiconductor manufacturing, where manufacturers are increasingly taking both technical and commercial responsibility for the power semiconductor and its associated gate unit. The control parameters are standardized by the manufacturer, simplifying the control interface discussion between converter design engineers and the power semiconductor manufacturer. This standardization makes the Insulated Gate Commutated Thyristor (IGCT) suitable for various converter topologies such as Voltage and Current Source Inverters, Resonance Converters, and Static Breakers.

Here’s a breakdown of the key points from the information:

1. Control Parameters Standardization:
   • Manufacturers are taking responsibility for technical and commercial aspects, standardizing control parameters like turn-on and off pulse amplitudes, pulse width and rate of rise, gate circuit inductance, back-porch current, and others. This standardization makes the IGCT adaptable to different converter topologies.
2. Reduction in Development Costs and Time:
   • By standardizing control parameters, the discussion between converter design engineers and power semiconductor manufacturers can be simplified. This simplification leads to a reduction in development costs and time, making power semiconductor technology more accessible to a broader group of users.
3. Introduction and Specification of Control Interface:
   • The control interface discussion is reduced to the specification of power supply, control signal transfer, and mechanical assembly. This approach facilitates a more streamlined interaction between design engineers and manufacturers.
4. Application Note Overview:
   • The application note provides basic design rules and handling/application recommendations for IGCT gate units. It covers various aspects, including power supply, insulation, optical control interface, control, diagnostics, protection parameters, and environmental considerations.
5. Gate Unit Generations:
   • The application note covers gate units of several IGCT types, categorizing them into two generations. While the gate units within a generation are similar in circuitry and functionality, they differ in mechanical size and gate drive circuit dimensioning.
6. Versatility Across Generations:
   • The application note is valid for both generation A and generation B gate units unless specified otherwise. Table 1 provides information about the IGCTs and their respective gate units.

Overall, the information suggests a shift towards greater collaboration and standardization in the semiconductor industry, particularly concerning the control interface of IGCTs, with an emphasis on reducing complexity and enhancing accessibility for a wider user base.