5SHX14H4502 3BHB003230R0101 power supply

5SHX14H4502 3BHB003230R0101

  • Device Type: Asymmetric Integrated Gate-Commutated Thyristor (5SHX14H4502 3BHB003230R0101)
  • Document Number: 5SHX14H4502 3BHB003230R0101
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Description

5SHX14H4502 3BHB003230R0101 power supply

Key Parameters and Features of IGCT Datasheet:

The key parameters and features of an IGCT datasheet are crucial for understanding the device’s capabilities and limitations. This section uses the example of the 5SHY 35L4510 IGCT, and the guide is applicable to all IGCTs.

Device Information:

  • Device Type: Asymmetric Integrated Gate-Commutated Thyristor (5SHX14H4502 3BHB003230R0101)
  • Document Number: 5SHX14H4502 3BHB003230R0101
  • Date: June 07

Maximum Rated Values:

  1. VDRM (Maximum Repetitive Peak Voltage): 4500 V
    • Maximum voltage the device can withstand in the off-state without breakdown.
  2. ITGQM (Maximum RMS On-State Current): 4000 A
    • Maximum RMS on-state current the device can handle under specified conditions.
  3. ITSM (Maximum Non-repetitive Surge Current): 32 × 10^3 A
    • Maximum surge current the device can withstand in a non-repetitive mode.
  4. V(T0) (Threshold Voltage at Turn-On): 1.4 V
    • Voltage required to turn on the device.
  5. rT (Thermal Resistance): 0.325 mW
    • Thermal resistance of the device, indicating its ability to dissipate heat.
  6. VDC-link (DC-Link Voltage): 2800 V
    • Maximum allowable DC-link voltage.

Characteristics and Features:

  • High snubberless turn-off rating.
  • Optimized for medium frequency (<1 kHz) and wide temperature range.
  • High reliability.
  • High electromagnetic immunity.
  • Simple control interface with status feedback.
  • AC or DC supply voltage.
  • Contact factory for series connection.

Additional Information:

  • The data presented here briefly describes the IGCT’s key features without reference to specific operating conditions.
  • These features also appear in the corresponding section of the datasheet along with operating or test conditions.
  • For example, ITSM = 32 × 10^3 A may also be found in the on-state section, specifying the conditions (tp = 10 ms, Tvj = 125 °C) under which this value applies with zero reapplied voltage.

Important Note:

  • Datasheets distinguish between maximum rated values and characteristic values. Maximum rated values indicate limits beyond which damage may occur, while characteristic values are defined under typical application conditions.

Conclusion:

  • Understanding these key parameters and features is essential for designers and engineers working with IGCTs. Subsequent sections will provide more detailed insights into individual parameters and their applications.