5SHY3545L0003 3BHB004692R0001 Controllable Board GVC732AE01

Description

5SHY3545L0003 3BHB004692R0001 Controllable Board GVC732AE01

It appears that you’ve provided information about the development and characteristics of the Integrated Gate-Commutated Thyristor (IGCT) in the mid-nineties. The IGCT is a type of high-power semiconductor device that was developed by ABB to improve upon the limitations of Gate Turn-Off Thyristors (GTOs), specifically in terms of speed and efficiency.

Here are some key points from the provided information:

1. Background on GTOs: In the mid-nineties, GTOs were the only high-power switches available, but they had limitations in terms of speed and difficulty in series connection, especially in equipment like 100 MW high voltage inverters.
2. ABB’s Innovation: ABB sought to improve the speed of GTOs by integrating them into gate-units, which significantly reduced turn-off time by a factor of 30. This innovation paved the way for the development of the IGCT.
3. IGCT Development: The IGCT was designed as a more efficient device with up to 40% lower losses compared to GTOs. A family of 14 devices has been developed over time.

1. IGCT Characteristics:
   • Snubberless Operation: IGCT operates in a snubberless manner and turns off like a bipolar transistor (e.g., IGBT) but conducts like a thyristor, resulting in low conduction losses.
   • Integration into Gate-Units: IGCTs are supplied integrated into their gate-units, simplifying the user’s connection requirements to a 20 V power supply and an optical fiber for on/off control.
2. Applications of IGCTs: IGCTs find applications in various demanding high-power scenarios, including:
   • Medium Voltage Drives (MVD)
   • Traction
   • Co-generation (e.g., Wind Power)
   • Flexible AC Transmission Systems (FACTS)
   • Solid State Breakers (SSB)
   • Power Quality
   • Induction Heating
3. High-Frequency Operation: The low turn-on losses and low conduction losses of IGCTs enable high-frequency operation, which was previously challenging for high-power semiconductors.

In summary, the development of IGCTs by ABB addressed the limitations of GTOs, offering a more efficient and versatile solution for various high-power applications.

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