5SHY3545L0016 3BHB020720R0002 Integrated Gate Thyristor 3BHE019719R0101 GVC736BE101

Electrical Parameters of BCT

Electrical Parameters

For most electrical parameters, the BCT data aligns with the standard PCT range. This similarity enables users to employ the same gate driver units for both BCTs and PCTs. However, due to the BCT design, certain parameters are defined differently than in a standard PCT.

1. VRM (Maximum Repetitive Voltage):
   • VRM is the maximum repetitive voltage level that the BCT can block in either direction.
   • Defined for half-sine voltage pulses at a line frequency of 50 or 60 Hz.
   • Exceeding the specified VRM can lead to uncontrolled triggering or thermal runaway, resulting in device failure.
2. IRM (Maximum Leakage Current):
   • IRM specifies the maximum leakage current when VRM is applied.
   • Measured with 50 Hz half-sine pulses at the maximum junction temperature (Tvjmax).
   • Decreased junction temperature results in decreased leakage current.
3. VSM (Maximum Surge Voltage):
   • VSM is the maximum surge voltage level the BCT can block.
   • Represents the BCT’s ability to withstand non-repetitive voltage transients with a pulse width of 10 ms or less.
   • Exceeding VSM can lead to uncontrolled triggering and device destruction.
   • VSM is not specified for devices with VRM < 4400 V, as VRM and VSM are equal over the entire temperature range.
   • For devices with VSM > 4400 V, VSM and VRM are equal for junction temperatures up to 110 °C. Below 110 °C, VRM values up to VSM can be utilized.
4. ISM (Maximum Leakage Current during Surge):
   • ISM specifies the maximum leakage current when VSM is applied.
   • Measured at Tvjmax with a pulse width (tp) of 10 ms.
   • A decrease in junction temperature leads to decreased leakage current.
5. Parameter Definitions:
   • For parameters like ITSM, Q, tq, VGD, IGD, (di/dt)crit, (dv/dt)crit, and td, the abbreviations VD and VR are used.
   • VD represents a voltage in the forward direction, triggered or just conducted, while VR is a voltage in the reverse direction that is active for the described parameter.
   • BCTs are produced with two thyristor functions exhibiting almost identical behavior, and one set of curves/data is valid for both thyristor functions.
   • Electrical mounting direction doesn’t require special consideration from an application circuit design perspective.