5SHY4045L0001 3BHB018162R0001 3BHE009681R0101 GVC750BE101 Swiss series

The provided text appears to describe various aspects related to the Insulated Gate Commutated Thyristor (IGCT), including its structure, operation in thyristor and transistor modes, and different phases. Let’s break down the key points:

IGCT Phase: Thyristor Structure – Current/Voltage Waveform (Conduction):

1. Conducting State:
   • IGCT operates in a conducting state similar to thyristor mode.
   • Active thyristor mode with electron emission from the cathode and hole emission from the anode.
2. Low On-State Voltage Drop:
   • Very low on-state voltage drop during conduction.

IGCT Phase: Transistor Structure – Current/Voltage Waveform:

1. Anode Current Commutated to Gate:
   • Anode current is commutated to the gate.
   • Transistor mode is activated.
2. Cathode Fully Bypassed through Gate Unit:
   • The cathode is fully bypassed through the gate unit.
3. Thyristor Converted to Open Base PNP Transistor:
   • Thyristor is converted to an open-base PNP transistor.
4. Hard Drive Condition – Commutation before VAK Rises:
   • Commutation occurs before the rise of VAK (Voltage Across Cathode and Anode).
5. Commutation Time Formula:
   • Commutation time is approximately IT · Lσ / VGU (where IT is the current, Lσ is inductance, and VGU is gate voltage).

IGCT Gate Circuit Requirements:

1. Current-Driven Device:
   • The thyristor is a current-driven device.
2. Low Inductive Coupling:
   • IGCT operation requires low inductive coupling between the gate unit and power semiconductor.
   • Components include distributed gate on a silicon wafer, low inductive package for power semiconductor, integration of power semiconductor and gate unit, and a low inductive gate unit.

Asymmetric IGCT, Reverse Conducting IGCT, Reverse Blocking IGCT:

1. Asymmetric IGCT:
   • Full forward blocking capability.
   • Typically used with antiparallel diode.
   • Used in voltage source inverters.
2. Reverse Conducting IGCT:
   • Full forward blocking capability.
   • Integrated antiparallel diode.
   • Used in voltage source inverters.
3. Reverse Blocking IGCT:
   • Full forward blocking capability.
   • Full reverse blocking capability.
   • Typically used in current source inverters and breakers.

Note:

• Different types of IGCTs are mentioned, each with its specific applications and characteristics, such as full forward or reverse blocking capabilities and the presence of integrated antiparallel diodes.

This text provides an overview of IGCT structures, modes of operation, and various types, emphasizing their characteristics and applications in different configurations. If you have specific questions or need further clarification on any point, feel free to ask.