5SHY4045L0003 3BHB021400 3BHE019719R0101 GVC736BE101 Swiss series

¥5,600.00

5SHY4045L0003 3BHB021400 3BHE019719R0101 GVC736BE101
Monolithic silicon design.
Pressure contact design with no bond wire or solder layer.
Hermetic ceramic housing.

Category: SKU: 3BHE019719R0101 GVC736BE101 Tag:
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Description

5SHY4045L0003 3BHB021400 3BHE019719R0101 GVC736BE101 Swiss series

 

The provided text discusses the design and reliability considerations for Insulated Gate Commutated Thyristor (IGCT) and mentions some specific features of Gen3 design. Let’s break down the key points:

Power Handling and Reliability Considerations:

  1. Power Handling:
    • Focus on achieving the lowest on-state losses possible.
    • Optimal ratio of active area to edge termination.
    • Low part count of power semiconductor.
    • High ruggedness against load cycling aging.
  2. Thermal Management:
    • Double side cooling for superior thermal management.
  3. Failure Mode:
    • Short circuit is considered as the optimal failure mode for applications with redundancy.
  4. Environmental Protection:
    • Power semiconductor well protected against environmental influences like humidity.
  5. Gate Unit Reliability:
    • High field reliability of the gate unit.
  6. Thyristor Structure:
    • Monolithic silicon design.
    • Pressure contact design with no bond wire or solder layer.
    • Hermetic ceramic housing.
  7. Gen3 Design Features:
    • Retain the current outer dimensions for compatibility with the application and integrated gate unit.
    • Optimization focus on turn-off and thermal performance.
    • Increased device diameter through efficient use of raw silicon wafer.
    • Minimal gate-circuit impedance achieved by using a gate contact infrastructure at the device’s periphery and optimized routing of the gate contact through the housing.
    • Turn-off current increased by adjusting doping profile.

Field Reliability and “Gotthard Lift” Example:

  1. Field Reliability – Gotthard Lift:
    • Measurement of Field Failure Rate (FIT) for GCT and gate unit.
    • Devices removed from the Gotthard lift application after 15 years of heavy-duty operation.
    • The lift had a known load profile and number of cycles (28,200,000 tons of excavated gravel).
    • Traces of wear-out were found, but degradation was low.
    • Example shows minimal degradation of the cathode metallization.

Conclusion:

The text emphasizes the importance of power handling efficiency, thermal management, and reliability in the design of IGCTs, specifically highlighting features of Gen3 design. The example from the Gotthard lift application illustrates the field reliability and minimal degradation achieved after a significant period of operation.

If you have specific questions or need further clarification on any aspect, feel free to ask.

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