ABB DSA605-28A Thyristor wafer

Description

Thyristor (SCR) technology is a well proven solution which is used for high current,
relative long pulses and low current rise rates in capacitor discharge applications.
Standard commercial of-the-shelf devices can be used, but it should be taken into
consideration that often the life-time of such devices is reduced due to the fact that the
manufacturer has not designed and not tested the device to be used outside the
datasheet values. Therefore it is of vital importance to check the capability and the
corresponding device life-time with the manufacturer before. Depending on the
application, the pulse current, current rise-time, pulse length and pulse repetition rate,
different wafer designs can be selected to fulfil the requirements. Figure 1 shows the
evolution of Ø 51 mm thyristor wafers from 1975 till the year 2000. These designs are
available in different diameters for different current capabilities. Blocking voltages can be
from 1800V till up to 8500V per device for the thyristor designs and up to 6000V for the
highly interdigitated designs (GTO-like structure). For higher voltage, devices can be
stacked in series connection.

Above the GTO-Like technology is mentioned. This technology is using the same type of
gate structure as GTO devices, but has no switch-off capability. Therefore it benefits from
very fast switch-on capability of about 1 µs, and can handle very high di/dt of up to 50
kA/µs by using a 91 mm wafer diameter. Depending on the overall diameter, between
800 and 2600 small thyristor islands are located in parallel on the silicon wafer. The
devices are available with 51mm, 68mm and 91 mm wafer diameters and can be
asymmetric blocking (Forward 4500V, Reverse 18V) or reverse conducting, with an
integrated freewheeling diode. The advantage of the monolithic integrated freewheeling
diode is that there is almost no induction between the switching component and the
freewheeling diode which is otherwise located in a separate stack assembly. The GTOLike devices are available as single devices without driver unit. Triggering can be done
with a strong gate pulse in the range of about 500A and di/dt of about 1 kA/µs. These
devices are mainly used for crowbar- or dump switch applications [2] where triggering
events are very limited. For those applications where switching is often required or where
repetition rates are high, the device can be delivered with an integrated driver unit
reducing the inductive path between driver and device substantially. The driver units are
specially made for use with series connected devices and are energized by a separate
current source power supply using a HV cable true the input transformers of the driver
units. The HV cable is the isolation between the device levels in the series connection.
The current source has an output of 25 kHz and 4A and can drive up to 8 devices in
series, depending on device size and pulse repetition frequency. Figure 2 shows the low
inductive gate path in a GTO-like Thyristor housing.

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